features sma connector ideal for electron detection 100% internal qe ultra high speed electro-optical characteristics at 25c parameters test conditions min typ max units active area responsivity, r reverse breakdown voltage, v r capacitance, c rise time dark current thermal parameters storage and operating temperature range ambient 1 nitrogen or vacuum maximum junction temperature -10 to 40c 1 -20c to 80c 70c 1 temperatures exceeding these parameters may create oxide growth on the active area. over time responsivity to low energy radiation and wavelengths below 150nm will be compromised. tighten to maximum torque of 5 inch/pounds. permanent damage will result if higher torque values are used and warranty is voided. dimensions are in inch [metric] units. 1mm x 1mm (see graphs on next page) i r = 1a v r = 0v rl = 50 , v r = 52v v r = 52v 55 0 1 40 700 1 mm 2 a/w volts pf psec na photodiode 1 mm 2 AXUVHS11 revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
0.5 0.3 0.2 0.1 0.4 0.0 200 300 400 500 600 700 800 900 1000 1100 responsivity (a/w) uv-vis-nir photon responsivity wavelength (nm) wavelength (nm) 0.30 0.20 0.10 0.05 0.15 0.25 0.00 0 150 100 50 200 250 responsivity (a/w) euv-uv photon response energy (ev) 0.30 0.20 0.10 0.05 0.15 0.25 0.00 100 1000 10,000 100,000 responsivity (a/w) electron response photodiode 1 mm 2 AXUVHS11 revision february 26, 2013 750 mitchell road, newbury park, california 91320 phone: (805) 499-0335, fax: (805) 499-8108 email: sales@optodiode.com, website: www.optodiode.com
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